IEEE Instrumentation And Measurement
نویسندگان
چکیده
This work describes a method to derive from measurements an accurate lumped element model of spiral integrated inductors on silicon substrate. The analysis method is based on a wideband two–port measurement of the S-parameters of the device under test and enables an accurate evaluation of the parasitic effects that limit the performance of these integrated devices.
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تاریخ انتشار 1999